Web8 de set. de 2024 · Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding voltage. Most existing dual-direction ESD protection devices are based on … Web27 de ago. de 2010 · A lateral BJT clamp for protecting a high voltage pin that is arranged adjacent another high voltage pin, comprising at least one collector finger, at least one emitter finger, a base, a buried layer of the same doping type as the base, and a sinker extending downward toward the buried layer, of the same doping type as the base. 5.
AN1353 Op Amp Rectifiers, Peak Detectors and Clamps
Webpossible. This will lower the value of the BJT betas. 2.) Reduce the values of R N-and R P-. This requires more current before latch-up can occur. 3.) Surround the transistors with guard rings. Guard rings reduce transistor betas and divert collector current from the base of SCR transistors. 140805-01 p-well n- substrate FOX n+ guard bars n ... WebAccording to the invention, there is provided a method of controlling the breakdown voltage of a BJT or of a BSCR device, which includes an npn bipolar structure with an n-emitter, … openthreads编译
Baker clamp - Wikipedia
Web1 de mar. de 2012 · A silicon-controlled rectifier (SCR)-incorporated BJT with high holding voltage is developed for electrostatic discharge (ESD) protection in a 0.6 $\mu\hbox {m}$ high-voltage 10 V process.... Web23 de nov. de 2024 · Below is an overview of different kinds of ESD devices used for high voltage (HV) or BCD processes. There are clamps that are typically provided by the … Websufficiently high gain in the clamping amplifier. This can be seen by considering the schematic voltage clamp circuit of Fig. 2, as discussed by Moore (1971). The membrane … openthreads library