Web1 de jul. de 2010 · ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure. This study has investigated the influence of the radio frequency … WebSputter deposition of titanium into trench and via topography has been studied under conditions of pressure as low as 0.3 mTorr (0.04 Pa) for long (30 cm) and short (9 cm) throw distances. Film resistivity and deposition rates at both distances have been measured for pressures from 0.3 mTorr up to 5 mTorr (0.67 Pa). Pinhole experiments have been …

Titanium sputter deposition at low pressures and long throw …

WebSputter deposition at long-throw distances (15-30 in.) and low pressures (1 mTorr) were developed mainly for the semiconductor industry to deposit metals and dielectrics into trenches or vias on silicon and gallium arsenide wafers. Web7 de mar. de 2024 · When the target to substrate distance is roughly equal to the diameter of the target one speaks of long throw sputtering. The idea behind this setup is to create … samsung kies for windows 10 64 bit

Copper Wires for High Speed Logic LSI Prepared by Low Pressure Long …

Web1 de fev. de 2003 · Abstract Sputter deposition at long-throw distances (15-30 in.) and low pressures (21-in. diameter) in a standard box coater using smaller-diameter sputter … Web1 de set. de 1997 · “Long throw” sputter deposition can be advantageous over other means of directional sputtering, such as collimated sputter deposition, because of the absence of collimators and related problems. However, due to the finite target size and sample geometry, an asymmetry is observed at the wafer edge with a thicker deposit on the … WebLong throw sputtering also develops an asymmetry problem of deposition on the substrate from the center to the edge. As shown in Figure 2.45, in the case of a 200 mm wafer and … samsung kies alternative windows 10